Study of factors limiting electron mobility in InSb quantum wells
نویسندگان
چکیده
We observe a significant increase in InSb quantum-well mobility when remote doping of Al0.09In0.91Sb barriers is accomplished by three layers, rather than one layer, of Si d doping. At 7 K, the electron mobility in single quantum-well structures grown on GaAs substrates is as high as 280 000 cm/V s with an electron density of 2.33310 cm. The density of oriented abrupt steps and square-mound features on the sample surface correlates with the electron mobility in the well. © 1999 American Vacuum Society. @S0734-211X~99!04203-1#
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تاریخ انتشار 1999